Electrical characterization of metastable carbon clusters in SiC - a theoretical Study

Electrical characterization of metastable carbon clusters in SiC - a theoretical Study
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SiC 中亚稳态碳簇的电学表征 - 理论研究

DOI：
10.1103/physrevb.73.033204
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
E. Janzén
E. Janzén
中科院分区：
--
文献类型：
--
作者：
Á. Gali;N. T. Son;E. Janzén

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在3C $-和4 H\text {\ensuremath{-}}\mathrm{SiC}$中进行的第一性原理计算表明，在辐照的$\mathrm{SiC}$中可以产生小的亚稳碳簇。亚稳碳簇具有$p$型和$n$型$4 H\text {\ensuremath{-}}\mathrm{SiC}$的占据水平。根据照射条件和退火温度，新的光致发光中心可能会被检测到的光谱中的特征局部振动模式。我们提供的占领水平和本地振动模式的缺陷，使识别成为可能。
First-principles calculations carried out in $3C$- and $4H\text{\ensuremath{-}}\mathrm{SiC}$ show that small metastable carbon clusters can be created in irradiated $\mathrm{SiC}$. The metastable carbon clusters possess occupation levels in the $p$-type as well as in the $n$-type $4H\text{\ensuremath{-}}\mathrm{SiC}$. Depending on the conditions of irradiation and the annealing temperature new photoluminescence centers might be detected with characteristic local vibrational modes in the spectrum. We provide the occupation levels and the local vibrational modes of the defects to make the identification possible.