Field-assisted photoemission from InP/InGaAsP photocathode with p/n junction
Field-assisted photoemission from InP/InGaAsP photocathode with p/n junction
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具有 p/n 结的 InP/InGaAsP 光电阴极的场辅助光电发射
DOI：
10.1063/1.120098
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发表时间：
1997
影响因子：
4
通讯作者：
T. Hiruma
中科院分区：
文献类型：
--
作者：
Minoru Niigaki;T. Hirohata;Tomoko Suzuki;H. Kan;T. Hiruma
采用p/n结代替肖特基触点的外偏置InP/InGaAsP光电阴极实现了1.35 μm阈值的高量子发光效率。当阴极冷却至- 80°C时，在1.3 μm处的量子效率为5%（每入射光子的电子数）。光电阴极由p+InP衬底上的n+InP接触层、p - InP光电子发射层和p - InGaAsP光子吸收层组成。
A high quantum efficiency of photoemission to a 1.35 μm threshold has been achieved from an externally biased InP/InGaAsP photocathode which has a p/n junction instead of a Schottky contact. The quantum efficiency at 1.3 μm is 5% (electron per incident photon) with the photocathode cooled to −80 °C. The photocathode consists of a n+InP contact layer, a p−InP photoelectron-emitting layer and a p−InGaAsP photon-absorbing layer on a p+InP substrate.