Omnidirectional reflective contacts for light-emitting diodes
Omnidirectional reflective contacts for light-emitting diodes
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DOI：
10.1109/led.2003.817386
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发表时间：
2003-11-01
影响因子：
4.9
通讯作者：
Karnutsch, C
中科院分区：
文献类型：
--
作者：
Gessmann, T;Schubert, EF;Karnutsch, C
在AlGaInP发光二极管（LED）中展示了导电全向反射器（ODR）。ODR用作p型接触并且包括半导体、金属层和中间低折射率介电层。介电层被AuZn微触点阵列穿孔，从而实现导电性。结果表明，ODR显着增加了从AlGaInP LED的光提取相比，采用分布式布拉格反射器（DBR）的参考LED。ODR和DBR-LED的外量子效率分别为18%和11%。
An electrically conductive onmidirectional reflector (ODR) is demonstrated in an AlGaInP light-emitting diode (LED). The ODR serves as p-type contact and comprises the semiconductor, a metal layer and an intermediate low-refractive index dielectric layer. The dielectric layer is perforated by an array of AuZn microcontacts thus enabling electrical conductivity. It is shown that the ODR significantly increases light extraction from an AlGaInP LED as compared to a reference LED employing a distributed Bragg reflector (DBR). External quantum efficiencies of 18% and 11% are obtained for the ODR- and the DBR-LED, respectively.