Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate
Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate
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DOI：
10.1109/led.2019.2910598
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发表时间：
2019-06-01
影响因子：
4.9
通讯作者：
Kimoto, T.
中科院分区：
文献类型：
--
作者：
Nakajima, M.;Kaneko, M.;Kimoto, T.
我们演示了通过离子注入到常见的高纯度半绝缘碳化硅 (SiC) 衬底中制造的 n 沟道和 p 沟道结型场效应晶体管 (JFET) 的常断 400 摄氏度操作。本文提出的侧栅结构具有良好的阈值电压可控性。目前的结果保证了基于 JFET 的互补逻辑集成电路 (IC) 在高温下运行的潜力。
We demonstrate normally-off 400 degrees C operation of n-channel and p-channel junction field-effect transistors (JFETs) fabricated by an ion implantation into a common high-purity semi-insulating silicon carbide (SiC) substrate. The side-gate structure proposed in this letter has good controllability of threshold voltage. The present results assure the potential of JFET-based complementary logic integrated circuits (ICs) operational at high temperature.