9.1-W High-Efficient Continuous-Wave End-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Laser
9.1-W High-Efficient Continuous-Wave End-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Laser
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9.1W 高效连续波端面泵浦垂直外腔表面发射半导体激光器
DOI：
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发表时间：
2006
影响因子：
2.6
通讯作者：
Yongjo Park
中科院分区：
文献类型：
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作者：
J. H. Lee;J. Y. Kim;Sang Moon Lee;Jaeryung Yoo;Ki Sung Kim;Soohaeng Cho;Seong;G. Kim;S. Hwang;Taek Kim;Yongjo Park
报道了一种端面泵浦垂直外腔表面发射半导体激光器(VECSEL)，其波长为1079 nm，输出功率大于9.1 W。为了使VECSEL能够以端面泵浦方案工作，使用液体毛细管键合方法将VECSEL芯片结合到光学透明散热器的表面。此外，在VECSEL芯片结构中采用了一种改进的分布布拉格反射镜，以最大化泵浦效率。这将导致端面泵浦的VECSEL具有高输出功率和良好的光束质量的特点，而不需要在样品上附加减反射膜。与端面泵浦方案和理想的输出光束相结合，端面泵浦的VECSEL将被证明在各种需要紧凑的模块和高输出功率的高效光源的应用中是有用的
We report the first demonstration of an end-pumped vertical-external-cavity surface-emitting semiconductor laser (VECSEL) with more than 9.1-W continuous-wave output power at a wavelength of 1079 nm. In order to enable the VECSEL to operate in an end-pumping scheme, a liquid capillary bonding method is used to bond the VECSEL chip to the surface of an optically transparent heat spreader. Moreover, a modified distributed Bragg reflector is applied to the VECSEL chip structure to maximize the pump efficiency. These will result in an end-pumped VECSEL that is characterized by high output power with good beam quality without additional antireflection coatings of the samples. In combination with an end-pumped scheme and desirable output beam, the end-pumped VECSEL will prove useful in a variety of applications requiring compact module and efficient source with high output power