Growth temperature induced physical property variation of InN films grown on nitrided sapphire substrate by PAMBE
Growth temperature induced physical property variation of InN films grown on nitrided sapphire substrate by PAMBE
复制标题
DOI：
10.1016/j.vacuum.2014.11.016
复制
发表时间：
2015-02
期刊：
影响因子：
4
通讯作者：
Yang Zhao;Hui Wang;Hang Yang;Guoguang Wu;Qiang Jing;Fubin Gao;Wancheng Li;Baolin Zhang;G. Du
中科院分区：
文献类型：
--
作者：
Yang Zhao;Hui Wang;Hang Yang;Guoguang Wu;Qiang Jing;Fubin Gao;Wancheng Li;Baolin Zhang;G. Du
