A CMOS on-chip temperature sensor with −0.21°C 0.17 °C inaccuracy from −20 °C to 100 °C

A CMOS on-chip temperature sensor with −0.21°C 0.17 °C inaccuracy from −20 °C to 100 °C
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CMOS 片上温度传感器,在 -20 °C 至 100 °C 范围内精度为 -0.21°C 0.17 °C

DOI:
10.1109/iscas.2013.6572416
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发表时间:
2013
期刊:
2013 IEEE International Symposium on Circuits and Systems (ISCAS2013)
影响因子:
--
通讯作者:
R. Geiger
R. Geiger
中科院分区:
--
文献类型:
--
作者:
Chen Zhao;Yen;D. Genzer;Degang Chen;R. Geiger

文献摘要

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提出了一种用于片上温度监测的高精度、小型、低功耗CMOS温度传感器。该温度传感器利用MOS晶体管的阈值电压的温度特性来感测温度,并且在温度范围内(-20 ° C,100°C)是相当线性的。基于阈值的温度传感器采用ON Semiconductor 1 P6 M(Single Poly,6 Metal)180 nm工艺设计,电源电压为1.8V。该电路的芯片面积仅为14.8μm×22.2μm。在1%占空比时,功耗约为1.026μW。测量结果表明,一批5个温度传感器的非线性误差范围为-0.21 ° C至+0.17 ° C,在目标工作温度范围(-20 ° C,100°C)内进行单点校准和批量斜率/曲率校正。
An accurate, small, low-power CMOS temperature sensor for on-chip thermal monitoring is proposed. The temperature sensor utilizes the temperature characteristics of the threshold voltage of a MOS transistor to sense temperature and is quite linear over the in temperature range (-20C, 100°C). The threshold-based temperature sensors were designed in the ON Semiconductor 1P6M (Single Poly, 6 Metal) 180nm process with a 1.8V supply voltage. The die area of this circuit is only 14.8μm×22.2μm. It has low power consumption of about 1.026μW at a 1% duty cycle. Measurement results show that a batch of 5 temperature sensors have a nonlinear error bounded of -0.21°C to +0.17°C with a one-point calibration and batch slope/curvature correction over the target operating temperature range (-20°C, 100°C).