A Correlation-Considered Variation-Aware Interconnect Parasitic Profile Extraction Method

A Correlation-Considered Variation-Aware Interconnect Parasitic Profile Extraction Method
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DOI:
10.1109/ted.2012.2202908
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发表时间:
2012-08
影响因子:
3.1
通讯作者:
Ren Zheng;Li Xi;Hu Shaojian;Chen Shoumian;Zhao Yuhang;Shi Yanling
Ren Zheng;Li Xi;Hu Shaojian;Chen Shoumian;Zhao Yuhang;Shi Yanling
中科院分区:
工程技术2区
文献类型:
--
作者:
Ren Zheng;Li Xi;Hu Shaojian;Chen Shoumian;Zhao Yuhang;Shi Yanling

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本文提出了一种在 40 nm 工艺技术上执行考虑相关性的统计互连寄生参数提取的新技术。为提取设计了五个测试结构。然后,执行 3D 仿真,并提取典型的互连技术配置文件 (ITP) 文件。基于测试结构的全映射测量、分布分析,特别是每个金属层的寄生耦合电容之间的相关性,使用主成分分析方法提取统计参数。然后,得出了考虑相关性的变化感知ITP文件提取的完整流程。通过蒙特卡罗模拟分布与环形振荡器输出信号周期测量的比较,证明提取的统计ITP是准确的。
This paper presents a novel technique of performing correlation-considered statistical interconnect parasitic parameter extraction on 40-nm process technology. Five test structures are designed for the extraction. Then, 3-D simulations are performed, and typical interconnect technology profile (ITP) file is extracted. Based on the full mapping measurements of test structures, their distribution analysis, and particularly the correlations between parasitic coupling capacitance of each metal layer, statistical parameters are extracted using principal-component-analysis method. Then, a complete flow of correlation-considered variation-aware ITP file extraction is concluded. According to the comparison between distributions of Monte Carlo simulations and measurements of output signal periods of ring oscillators, the extracted statistical ITP is proved to be accurate.