Nanoscale Raman Characterization of a 2D Semiconductor Lateral Heterostructure Interface
Nanoscale Raman Characterization of a 2D Semiconductor Lateral Heterostructure Interface
复制标题
二维半导体横向异质结界面的纳米尺度拉曼表征
DOI：
10.1021/acsnano.1c06595
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发表时间：
2021-12-22
期刊：
影响因子：
17.1
通讯作者：
Kung, Patrick
中科院分区：
文献类型：
--
作者：
Garg, Sourav;Fix, J. Pierce;Kung, Patrick
二维单层半导体横向异质结构中界面的性质，包括其组成、尺寸和异质性，严重影响了它在下一代光电子学的二维系统上产生的功能。在这里，我们使用尖端增强的拉曼散射（TERS）来表征界面在一个单层的二硫化钼/WS 2横向异质结构的空间分辨率为50 nm。共振和非共振TERS光谱表明，界面合金化的大小在一个数量级上变化。从50到600 nm。在一个单一的微晶。共振和非共振拉曼光谱的连续界面演化的纳米尺度成像使得能够对单层MoS 2、MoxW 1-xS 2和WS 2中的几种振动模式的缺陷激活、共振增强和材料组成进行解卷积。结果表明，纳米TERS光谱的能力，阐明宏观结构-性能关系的二维材料和表征横向界面的二维系统的长度尺度上的设备是必不可少的。
The nature of the interface in lateral heterostructures of 2D monolayer semiconductors including its composition, size, and heterogeneity critically impacts the functionalities it engenders on the 2D system for next-generation optoelectronics. Here, we use tip-enhanced Raman scattering (TERS) to characterize the interface in a single-layer MoS2/WS2 lateral heterostructure with a spatial resolution of 50 nm. Resonant and nonresonant TERS spectroscopies reveal that the interface is alloyed with a size that varies over an order of magnitude.from 50 to 600 nm.within a single crystallite. Nanoscale imaging of the continuous interfacial evolution of the resonant and nonresonant Raman spectra enables the deconvolution of defect activation, resonant enhancement, and material composition for several vibrational modes in single-layer MoS2, MoxW1-xS2, and WS2. The results demonstrate the capabilities of nanoscale TERS spectroscopy to elucidate macroscopic structure-property relationships in 2D materials and to characterize lateral interfaces of 2D systems on length scales that are imperative for devices.