Thermo-optic coefficient of PECVD silicon-rich silicon nitride.
Thermo-optic coefficient of PECVD silicon-rich silicon nitride.
复制标题
DOI：
10.1364/ol.403357
复制
发表时间：
2020-11
期刊：
影响因子：
3.6
通讯作者：
Natale G. Pruiti;C. Klitis;C. Gough;S. May;M. Sorel
中科院分区：
文献类型：
--
作者：
Natale G. Pruiti;C. Klitis;C. Gough;S. May;M. Sorel
本文首次对等离子体增强化学气相沉积法制备的富硅氮化硅光子集成波导的热光学系数（TOC）进行了表征。在从氮化硅到a- si的范围内，TOC随硅的分数组成线性增加。这一发现对于提高热调谐光子集成电路的功率效率具有重要意义。
The thermo-optic coefficient (TOC) of photonic integrated waveguides fabricated on silicon-rich silicon nitride grown by plasma-enanched chemical vapor deposition is characterized for the first time, to the best of our knowledge. The TOC is found to increase linearly with the fractional composition of silicon over a range from that of silicon nitride to a-Si. This finding is significant for improving the power efficiency of thermally tuned photonic integrated circuits.