Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
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DOI：
10.1063/1.1534627
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发表时间：
2003-02-01
影响因子：
3.2
通讯作者：
Kawai, T
中科院分区：
文献类型：
--
作者：
Masuda, S;Kitamura, K;Kawai, T
研制了以氧化锌为有源沟道层的底栅型薄膜晶体管(ZnO-TFT)。氧化锌薄膜是在450℃、氧分压为3m Torr的条件下用脉冲激光沉积的，所形成的材料的本底载流子浓度小于5×10(16)cm(-3)。由SiO_2和SiN_x组成的双层栅绝缘体有效地抑制了漏电流，使ZnO-TFT能够成功地工作。在硅片上制备的ZnO-TFTs的I-ON/I-OFF比大于10(5)，在玻璃上制备的ZnO-TFT的光学透过率大于80%。这些结果表明，制造一种甚至可以在可见光存在下工作的透明TFT是可能的。2003年美国物理研究所。[DOI：10.1063/1.1534627]。
Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TFT) have been constructed. The ZnO layers were deposited using pulsed laser deposition at 450degreesC at an oxygen pressure of 3 m Torr, and the material that was formed had a background carrier concentration of less than 5 X 10(16) cm(-3). A double layer gate insulator consisting of SiO2 and SiNx was effective in suppressing leakage current and enabling the ZnO-TFT to operate successfully. The I-on/I-off ratio of ZnO-TFTs fabricated on Si wafers was more than 10(5) and the optical transmittance of ZnO-TFTs fabricated on glass was more than 80%. These results show that it is possible to fabricate a transparent TFT that can even be operated in the presence of visible light. 2003 American Institute of Physics. [DOI: 10.1063/1.1534627].