Optical and microstructural studies of InGaN/GaN quantum dot ensembles
Optical and microstructural studies of InGaN/GaN quantum dot ensembles
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DOI：
10.1063/1.3226645
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发表时间：
2009-09
影响因子：
4
通讯作者：
S. C. Davies;D. Mowbray;F. Ranalli;P. Parbrook;Q. Wang;Tao Wang;B. Yea;B. Sherliker;M. Halsall;R. Kashtiban;U. Bangert
中科院分区：
文献类型：
--
作者：
S. C. Davies;D. Mowbray;F. Ranalli;P. Parbrook;Q. Wang;Tao Wang;B. Yea;B. Sherliker;M. Halsall;R. Kashtiban;U. Bangert
报道了InGaN/GaN量子点的光学和结构研究。随着InGaN淀积时间的增加，发光峰由润湿层（WL）向量子点（QD）转变，并发生强烈的红移。观察到从局域WL态的发射，具有与由于量子点的密度和性质非常不同的密度和性质。结构测量揭示了无序WL，与WL光致发光激发光谱的形式一致。
An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.