Wearable and Ultrasensitive Strain Sensor Based on High-Quality GaN pn Junction Microwire Arrays
Wearable and Ultrasensitive Strain Sensor Based on High-Quality GaN pn Junction Microwire Arrays
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基于高质量 GaN pn 结微线阵列的可穿戴超灵敏应变传感器
DOI：
10.1002/smll.201907461
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发表时间：
2020-03-18
期刊：
影响因子：
13.3
通讯作者：
Wang, Xianying
中科院分区：
文献类型：
--
作者：
Cheng, Shiduo;Han, Sancan;Wang, Xianying
随着可穿戴电子传感设备的快速发展，监测人体的柔性传感设备在个性化医疗保健中显示出巨大的前景。在本研究中，通过简单、可重复的制造工艺，制备了具有不同纵横比和大面积均匀性的高质量GaN - pn结微线阵列。随着宽高比的增加，GaN - pn结微线阵列的压电系数d（33）从7.23 pm V-1增加到14.46 pm V-1，比GaN块体材料高出数倍。此外，基于GaN微线的柔性超灵敏应变传感器具有最高d(33)，可实现10.4 V的最大开路电压，并且具有优异的耐用性，在10,000个周期内稳定输出信号，响应时间为50 ms。作为附着在人体皮肤上的柔性可穿戴传感器，具有高度均匀性的GaN微线pn结阵列可以精确监测人体细微的脉搏和运动，在未来的个性化医疗保健中具有很大的应用前景。
With the rapid growth in wearable electronics sensing devices, flexible sensing devices that monitor the human body have shown great promise in personalized healthcare. In the study, high-quality GaN pn junction microwire arrays with different aspect ratios and large-area uniformity are fabricated through an easy, repeatable fabrication process. The piezoelectric coefficient (d(33)) of GaN pn junction microwire arrays increases from 7.23 to 14.46 pm V-1 with the increasing of the aspect ratio, which is several times higher than that of GaN bulk material. Furthermore, flexible ultrasensitive strain sensor based on GaN microwires with the highest d(33) is demonstrated to achieve the maximum open circuit voltage of 10.4 V, and presents excellent durability with stable output signals over 10 000 cycles with a response time of 50 ms. As a flexible and wearable sensor attached to the human skin, the GaN microwire pn junction arrays with such a high degree of uniformity can precisely monitor subtle human pulse and motions, which show great promise in future personalized healthcare.