Composition dependence of defect energies and band alignments in the Cu(In1−xGax)(Se1−ySy)2 alloy system
Composition dependence of defect energies and band alignments in the Cu(In1−xGax)(Se1−ySy)2 alloy system
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Cu(In1−xGax)(Se1−ySy)2 合金系统中缺陷能量和能带排列的成分依赖性
DOI：
10.1063/1.1432126
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发表时间：
2002
影响因子：
3.2
通讯作者：
U. Rau
中科院分区：
文献类型：
--
作者：
M. Turcu;I. Kötschau;U. Rau
通过 ZnO/CdS/黄铜矿异质结的导纳谱研究了多晶 Cu(In1−xGax)(Se1−ySy)2 黄铜矿薄膜中缺陷能量的成分依赖性。我们使用主受主态的能量位置作为参考水平来确定多晶 Cu(In1−xGax)(Se1−ySy)2 半导体系统内的能带排列。 CuInSe2 与 S 合金化后，CuIn(Se0.4S0.6)2 中受体的活化能从 300 meV 增加到约 380 meV。当使用 Cu(In1−xGax)(Se1−ySy)2 且 x≈0.3 时，类似的结果成立。相比之下，Cu(In1−xGax)Se2合金系统中的受体活化能在整个成分范围0⩽x⩽1内基本保持不变。以受主能量为参考，我们发现CuInSe2和CuInS2之间的价带偏移ΔEV=−0.23 eV。 Cu(In0.7Ga0.3)Se2 和 Cu(In0.7Ga0.3)S2 之间发现相同的价带偏移。相比之下，CuInSe2/CuGaSe2 组合的 ΔEV 低于 0.04 eV。我们的结果...
The composition dependence of defect energies in polycrystalline Cu(In1−xGax)(Se1−ySy)2 chalcopyrite thin films is investigated by admittance spectroscopy of ZnO/CdS/chalcopyrite heterojunctions. We determine the band alignments within the polycrystalline Cu(In1−xGax)(Se1−ySy)2 semiconductor system using the energy position of the dominant acceptor state as a reference level. Upon alloying CuInSe2 with S the activation energy of the acceptor increases from 300 meV to approximately 380 meV in CuIn(Se0.4S0.6)2. A similar result holds when using Cu(In1−xGax)(Se1−ySy)2 with x≈0.3. In contrast, the acceptor activation energy remains essentially unchanged in the Cu(In1−xGax)Se2 alloy system over the whole composition range 0⩽x⩽1. Taking the acceptor energy as reference, we find a valence band offset ΔEV=−0.23 eV between CuInSe2 and CuInS2. The same valence band offset is found between Cu(In0.7Ga0.3)Se2 and Cu(In0.7Ga0.3)S2. In contrast, the combination CuInSe2/CuGaSe2 displays ΔEV below 0.04 eV. Our results ind...