Thin film SOI and SOS LDMOS structures with Linear Doping Profile and enlarged field plate
Thin film SOI and SOS LDMOS structures with Linear Doping Profile and enlarged field plate
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DOI：
10.1109/icmel.2004.1314574
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发表时间：
2004-05
期刊：
影响因子：
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通讯作者：
J. Roig;D. Flores;I. Cortés;S. Hidalgo;J. Millán
中科院分区：
文献类型：
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作者：
J. Roig;D. Flores;I. Cortés;S. Hidalgo;J. Millán
本文提出了一种适用于高压（> 600 V）应用的新型SOS（Silicon-On-Sapphire）LDMOS结构，它具有线性掺杂分布（LDP）或漂移区横向掺杂变化（VLD），并与SOI结构进行了分析和比较。使用包括阶梯氧化物的扩展场板（EFP）来实现镜像SOI类结构，其从场氧化物侧提供漂移区的垂直耗尽。所提出的结构的电气和热性能已获得从技术和电热模拟。虽然EFP-SOS LDMOS结构的亚阈值特性与EFP和FP-SOI结构的亚阈值特性相似，但由于栅极区参数相同，因此阻断电压和传导电流能力得到增强。尽管在EFP-SOS LDMOS晶体管中使用较低的最佳N/sub d/值，但由于所产生的热提取工艺的显著改进，它们的电流能力高于EFP-SOI晶体管的电流能力。
A new SOS (Silicon-On-Sapphire) LDMOS structure with Linear Doping Profile (LDP), or Variation on Lateral Doping (VLD) in the drift region, suitable for high voltage applications (> 600V) is proposed, analysed and compared with their SOI counterparts in this paper. An Extended Field Plate (EFP) including a step oxide is used to achieve a mirrored SOI-like structure which provides a vertical depletion of the drift region from the field oxide side. The electrical and thermal performances of the proposed structure have been obtained from technological and electro-thermal simulations. Although the subthreshold characteristics of the EFP-SOS LDMOS structure are similar than those of the EFP and FP-SOI counterparts, since the gate region parameters are identical, the blocking voltage and the conduction current capabilities are enhanced. In spite of the lower optimal N/sub d/ value used in EFP-SOS LDMOS transistors, their current capability is higher than that of the EFP-SOI ones due to the significant improvement of the generated heat extraction process.