Tunneling and Origin of Large Access Resistance in Layered-Crystal Organic Transistors
Tunneling and Origin of Large Access Resistance in Layered-Crystal Organic Transistors
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DOI：
10.1103/physrevapplied.8.054011
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发表时间：
2017-11-07
影响因子：
4.6
通讯作者：
Hasegawa, Tatsuo
中科院分区：
文献类型：
--
作者：
Hamai, Takamasa;Arai, Shunto;Hasegawa, Tatsuo
有机半导体的层状结晶性对于获得高性能有机薄膜晶体管（OTFT）是至关重要的，因为它允许平滑的沟道-栅极-绝缘体界面形成和沿界面的有效二维载流子传输沿着。然而，在器件操作中的晶体分子层的垂直输运的作用还没有一个至关重要的主题。在这里，我们表明，层间载流子输运导致不寻常的非线性电流-电压特性和巨大的接入电阻在极高品质的单晶OTFT的基础上2-癸基-7-苯基[1]苯并噻吩并[3; 2-B][1]-苯并噻吩（Ph-BTBT-C-10），涉及固有的多个半导体π共轭层插入，分别由电惰性的烷基链层。输出特性呈现依赖于层数（n）的非线性，在较大的n（1）处变得更加明显
Layered crystallinity of organic semiconductors is crucial to obtaining high-performance organic thin-film transistors (OTFTs), as it allows both smooth-channel-gate-insulator interface formation and efficient two-dimensional carrier transport along the interface. However, the role of vertical transport across the crystalline molecular layers in device operations has not been a crucial subject so far. Here, we show that the interlayer carrier transport causes unusual nonlinear current-voltage characteristics and enormous access resistance in extremely high-quality single-crystal OTFTs based on 2-decyl-7-phenyl[1]benzothieno[3; 2-b][1]-benzothiophene (Ph-BTBT-C-10) that involve inherent multiple semiconducting pi-conjugated layers interposed, respectively, by electrically inert alkyl-chain layers. The output characteristics present layer-number (n)-dependent nonlinearity that becomes more evident at larger n (1