Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode
Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode
复制标题
DOI：
10.1063/1.2191949
复制
发表时间：
2006-04-03
影响因子：
4
通讯作者：
Kawata, S
中科院分区：
文献类型：
--
作者：
Saito, Y;Motohashi, M;Kawata, S
我们用反射模式的针尖增强近场拉曼光谱观察了应变硅中的局域应变。针尖增强拉曼谱表明，应变硅的拉曼频率和强度在晶格失配引起的交叉阴影图案内是不同的。然而，由于光的衍射极限的平均效应，显微拉曼测量仅显示出均匀的特征。应变硅的纳米级表征对于开发可靠的下一代集成电路至关重要。这种技术不仅适用于应变硅，而且适用于任何其他晶体。
We observe localized strains in strained silicon by tip-enhanced near-field Raman spectroscope in reflection mode. The tip-enhanced Raman spectra show that the Raman frequency and intensity of strained silicon were different within a crosshatch pattern induced by lattice mismatch. Micro-Raman measurements, however, show only uniform features because of averaging effect due to the diffraction limit of light. Nanoscale characterization of strained silicon is essential for developing reliable next generation integrated circuits. This technique can be applicable not only to strained silicon but also to any other crystals.