A model of secondary electron imaging in the helium ion scanning microscope
A model of secondary electron imaging in the helium ion scanning microscope
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DOI：
10.1016/j.ultramic.2009.01.013
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发表时间：
2009-05-01
期刊：
影响因子：
2.2
通讯作者：
Joy, David
中科院分区：
文献类型：
--
作者：
Ramachandra, Ranjan;Griffin, Brendan;Joy, David
将二次电子产生的“半经验”模型与描述离子阻挡能力、散射和输运的TRIM程序相结合，构造了一个能够定量解释快氦离子从材料中产生二次电子的蒙特卡罗模拟(电离化)。这种方法要求半经验模型的参数通过与实验产量数据的拟合来确定，但它的优点是，与更基本的模型不同，它可以同样容易地应用于纯元素和复杂化合物。该模型被用于预测氦产生的SE的地形产额随能量和材料的变化，以及研究入射离子产生的SE与后向散射离子产生的SE的比率。(C)2009爱思唯尔B.V.保留所有权利。
A combination of the 'semi-empirical' model for secondary electron production and the TRIM routines which describe ion stopping power, scattering, and transport, has been used to construct a Monte Carlo simulation (IONiSE) that can quantitatively interpret the generation of secondary electrons (SE) from materials by fast helium ions. This approach requires that the parameters of the semi-empirical model be determined by fitting to experimental yield data but has the merit that, unlike more fundamental models, it can be applied with equal ease to both pure elements and complex compounds. The application of the model to predict the topographic yield variation of helium generated SE as a function of energy and material, and to investigate the ratio between SE generated by incident and backscattered ions, is demonstrated. (C) 2009 Elsevier B.V. All rights reserved.