High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension
High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension
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DOI：
10.1109/led.2011.2163055
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发表时间：
2011-09
影响因子：
4.9
通讯作者：
G. Pâques;S. Scharnholz;N. Dheilly;D. Planson;R. D. De Doncker
中科院分区：
文献类型：
--
作者：
G. Pâques;S. Scharnholz;N. Dheilly;D. Planson;R. D. De Doncker
首次将梯度腐蚀结终端扩展(JTE)应用于已完成的4H-SiC栅可关断晶闸管。这些器件证明了非植入高压碳化硅晶闸管的可行性。实验测得的最大正向击穿电压为7.8KV，与理想值8.1KV非常吻合。本文阐述了实现最佳四步JTE的概念性步骤，并将测量结果与有限元模拟结果进行了比较。
For the first time, a graded etched junction termination extension (JTE) is applied to completed 4H-SiC gate turn-off thyristors. These devices demonstrate the feasibility of nonimplanted high-voltage SiC thyristors. The maximal measured forward breakdown voltage of 7.8 kV corresponds very well to the ideal value of 8.1 kV. This letter explains the conceptual procedure to realize an optimal four-step JTE and compares measurement results with those obtained from finite-element simulations.