Sidewall passivation for InGaN/GaN nanopillar light emitting diodes
Sidewall passivation for InGaN/GaN nanopillar light emitting diodes
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DOI：
10.1063/1.4885455
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发表时间：
2014-07-07
影响因子：
3.2
通讯作者：
Mohney, Suzanne E.
中科院分区：
文献类型：
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作者：
Choi, Won Hyuck;You, Guanjun;Mohney, Suzanne E.
研究了侧壁钝化对InGaN/GaN多量子阱基纳米柱发光二极管（LED）性能的影响。在这项研究中，不同的蚀刻速率，KOH处理，和硫钝化的影响进行了研究，以减少纳米柱侧壁损伤，提高器件效率。在最佳蚀刻条件下制备的纳米柱显示出更高的光致发光强度相比，起始平面外延层。此外，通过电学和光学表征比较了具有和不具有硫钝化的纳米柱LED。与未钝化的纳米柱LED相比，钝化的纳米柱LED在反向偏压下的漏电流被抑制，并且电致发光（EL）强度高四倍。抑制的漏电流和EL强度增强反映了纳米柱侧壁处的非辐射复合的减少。此外，硫钝化的效果被发现是非常稳定的，并通过透射电子显微镜进一步了解其机制。(C)2014 AIP Publishing LLC.
We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy. (C) 2014 AIP Publishing LLC.