Determining On-Axis Crystal Thickness with Quantitative Position-Averaged Incoherent Bright-Field Signal in an Aberration-Corrected STEM
Determining On-Axis Crystal Thickness with Quantitative Position-Averaged Incoherent Bright-Field Signal in an Aberration-Corrected STEM
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DOI：
10.1017/s1431927612000189
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发表时间：
2011-10
影响因子：
2.8
通讯作者：
H. Xin;Ye Zhu;D. Muller
中科院分区：
文献类型：
--
作者：
H. Xin;Ye Zhu;D. Muller
摘要样品厚度的准确测定是定量分析电子显微术的关键。在这里，我们证明了位置平均的非相干明场信号记录在一个绝对的规模，可以用来确定在轴晶体的厚度与±1.6 nm的精度。该方法测量样品的结晶部分和非结晶部分（表面非晶层）。然而，它避免了由表面等离子体对电子能量损失谱估计的非弹性平均自由程厚度的贡献所导致的系统误差。
Abstract An accurate determination of specimen thickness is essential for quantitative analytical electron microscopy. Here we demonstrate that a position-averaged incoherent bright-field signal recorded on an absolute scale can be used to determine the thickness of on-axis crystals with a precision of ±1.6 nm. This method measures both the crystalline and the noncrystalline parts (surface amorphous layers) of the sample. However, it avoids the systematic error resulting from surface plasmon contributions to the inelastic mean-free-path thickness estimated by electron energy loss spectroscopy.