Morphology of second-phase particles and pores in InP substrates and their elimination by a rapid in situ P injection before crystal growth
Morphology of second-phase particles and pores in InP substrates and their elimination by a rapid in situ P injection before crystal growth
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InP 衬底中第二相颗粒和孔隙的形态及其在晶体生长前通过快速原位注入 P 消除
DOI：
10.1002/pssb.201552494
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Tongnian Sun
中科院分区：
文献类型：
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作者：
Shujie Wang;Niefeng Sun;Linjie Gao;Xinhui Liu;Yanlei Shi;Xiaolan Li;Huimin Shao;Yang Wang;Lijie Fu;Huisheng Liu;Tongnian Sun
在InP晶体中观察到了富In的第二相颗粒，这是由于多晶熔化过程中P的损失引起的。它们的表征表明，这些富In粒子的尺寸为200 nm-20 µm，第二相粒子周围的位错结构及其形成可用棱柱位错环模型解释。在富P条件下，在晶体生长前快速进行仰卧起坐注射，可以消除富铟第二相颗粒。过量的磷注入会导致内部有磷沉积的磷孔的形成。给出了消除缺陷的最佳注入量。
In this paper, indium (In)‐rich second‐phase particles are observed in InP crystals, which is induced by the loss of phosphorus (P) during polycrystalline melting. Their characterizations reveal that the size of these In‐rich particles is 200 nm–20 µm. The dislocation structure surrounding the second‐phase particle and its formation is explained by the model of prismatic dislocation loop. The indium‐rich second‐phase particles could be eliminated under P‐rich condition by a rapidin situP injection before crystal growth. Excessive P injection will lead to the formation of P pores with internal P deposits. The optimal injection value is given to eliminate the defects.