Ultrathin Free-Substrate n-Type PTCDI-C13 Transistors With Bilayer Polymer Dielectrics
Ultrathin Free-Substrate n-Type PTCDI-C13 Transistors With Bilayer Polymer Dielectrics
复制标题
具有双层聚合物电介质的超薄无衬底 n 型 PTCDI-C13 晶体管
DOI：
10.1109/led.2018.2845114
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发表时间：
2018-08-01
影响因子：
4.9
通讯作者：
Liu, Yichun
中科院分区：
文献类型：
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作者：
Liu, Meiling;Wang, Haiting;Liu, Yichun
采用聚甲基丙烯酸甲酯（PMMA）/聚乙烯醇（PVA）双层聚合物膜制备了超薄无衬底n型PTCDI-C13有机薄膜晶体管。PVA可以帮助从支撑层剥离整个器件，而PMMA可以提高n型OTFT的性能。因此，我们能够实现电流开/关比超过10（7）的无衬底（类似于590 nm）的PTCDI-C13 OTFT。电子迁移率达到0.54cm（2）V-1 s（-1）。这些n型OTFT可以成功地粘附到3-D曲面上，具有几乎不变的迁移率和电流开/关比以及强大的抗褶皱性。这些结果表明，可弯曲的n沟道OTFT在柔性和共形电子器件中具有很好的应用潜力。
Polymethyl methacrylate (PMMA)/poly(vinylalcohol) (PVA) bilayer polymer dielectrics were used to fabricate ultra-thin free-substrate n-type PTCDI-C13 organic thin-film transistors. PVA can help peel the entire device from the supporting layer, while PMMA improves the performance of the n-type OTFTs. As a result, we were able to achieve a current ON/OFF ratio exceeding 10(7) for an ultrathin (similar to 590nm) substrate-freePTCDI-C13OTFT. The electron mobility achieved as high as 0.54cm(2) V-1 s(-1). These n-type OTFTs can successfully adhere to a 3-D curved surface with nearly unaltered mobility and current ON/OFF ratio and a strong resistance to crumpling. These results show that ultrathin flexible n-channel OTFTs have promising potential for applications in flexible and conformal electronicdevices.