Chemical Vapor Deposition Growth of Graphene and Related Materials
Chemical Vapor Deposition Growth of Graphene and Related Materials
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DOI：
10.7566/jpsj.84.121013
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发表时间：
2015-12-15
影响因子：
1.7
通讯作者：
Maruyama, Shigeo
中科院分区：
文献类型：
--
作者：
Kitaura, Ryo;Miyata, Yasumitsu;Maruyama, Shigeo
石墨烯、六方氮化硼（hBN）、过渡金属二硫族化合物（TMDCs）等原子层及其异质结构的研究引起了人们的广泛关注。化学气相沉积（CVD）技术可以提供大面积结构清晰的高质量原子层样品，对近年来原子层研究的进展作出了重大贡献。在本文中，我们重点介绍了各种原子层的CVD生长，并综述了最近的进展，包括：(1)以甲烷和乙醇为碳源的石墨烯的CVD生长，(2)以硼嗪和氨硼烷为碳源的hBN的CVD生长，(3)单炉和多炉方法的各种TMDCs的CVD生长，以及(4)垂直和横向异质结构（如石墨烯/hBN， MoS2/石墨，WS2/hBN和MoS2/WS2）的CVD生长。
Research on atomic layers including graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDCs) and their heterostructures has attracted a great deal of attention. Chemical vapor deposition (CVD) can provide large-area structure-defined high-quality atomic layer samples, which have considerably contributed to the recent advancement of atomic-layer research. In this article, we focus on the CVD growth of various atomic layers and review recent progresses including (1) the CVD growth of graphene using methane and ethanol as carbon sources, (2) the CVD growth of hBN using borazine and ammonia borane, (3) the CVD growth of various TMDCs using single and multi-furnace methods, and (4) CVD growth of vertical and lateral heterostructures such as graphene/hBN, MoS2/graphite, WS2/hBN and MoS2/WS2.