Impact of supply voltage and particle LET on the soft error rate of logic circuits
Impact of supply voltage and particle LET on the soft error rate of logic circuits
复制标题
电源电压和粒子LET对逻辑电路软错误率的影响
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
B. Bhuva
中科院分区：
文献类型：
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作者：
Hui Jiang;H. Zhang;R. C. Harrington;J. Maharrey;J. Kauppila;L. Massengill;B. Bhuva
研究了14/16 nm结点FinFET组合逻辑电路在不同电源电压和频率下的重离子辐照。结果表明，粒子LET对逻辑软错误率(SER)有很大影响。用单粒子瞬变(SET)实验数据和逻辑SER模型解释了低LET粒子和高LET粒子SER的差异。
Heavy-ion irradiations of 14/16-nm node bulk FinFET combinational logic circuits under different supply voltage and frequency are investigated. Results indicate that particle LET strongly affects logic soft-error rate (SER). Single-event transient (SET) experimental data and models for logic SER are used to explain the differences in SER for low-LET particles and high-LET particles.