Interface induced high temperature superconductivity in single unit-cell FeSe on SrTiO3(110)
Interface induced high temperature superconductivity in single unit-cell FeSe on SrTiO3(110)
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SrTiO3(110) 上单晶 FeSe 的界面诱导高温超导
DOI：
10.1063/1.4950964
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发表时间：
2016
影响因子：
4
通讯作者：
Guanyu Zhou
中科院分区：
文献类型：
--
作者：
Guanyu Zhou
本文报道了用分子束外延方法在SrTiO_3（STO）（110）衬底上生长的单胞（1-UC）FeSe薄膜的高温超导性。通过原位扫描隧道显微镜测量，我们观察到的超导带隙为17毫电子伏的1-UC FeSe薄膜。在1-UC FeSe/STO（110）上覆盖FeTe层的输运测量表明其超导起始转变温度（TC）为31.6K，上临界磁场为30.2T。我们还发现，外加电场可以进一步增加TC，尽管其作用比STO（001）衬底上的作用要弱。
We report high temperature superconductivity in one unit-cell (1-UC) FeSe films grown on SrTiO3 (STO)(110) substrate by molecular beam epitaxy. By in-situ scanning tunneling microscopy measurement, we observe a superconducting gap as large as 17 meV on the 1-UC FeSe films. Transport measurements on 1-UC FeSe/STO(110) capped with FeTe layers reveal superconductivity with an onset transition temperature (TC) of 31.6 K and an upper critical magnetic field of 30.2 T. We also find that TC can be further increased by external electric field although the effect is weaker than that on STO(001) substrate.