Fermi-dirac and random carrier distributions in quantum dot lasers
Fermi-dirac and random carrier distributions in quantum dot lasers
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DOI：
10.1063/1.4862813
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发表时间：
2014-01-20
影响因子：
4
通讯作者：
Blood, P.
中科院分区：
文献类型：
--
作者：
Hutchings, M.;O'Driscoll, I.;Blood, P.
利用实验测量的增益和发射作为温度的函数，描述了一种描述量子点(QD)激光器结构中辐射态的载流子分布随温度变化的方法。该方法与网点分布不均匀的形式无关。在200-300K温度范围内，发现了晶格温度的温度分布。在200K以下，特征温度超过晶格温度，并且分布在约60K以下变得随机，这使得可以确定费米-狄拉克统计在量子点激光阈值计算中适用的温度范围。(C)2014 AIP出版有限责任公司。
Using experimental gain and emission measurements as functions of temperature, a method is described to characterise the carrier distribution of radiative states in a quantum dot (QD) laser structure in terms of a temperature. This method is independent of the form of the inhomogeneous dot distribution. A thermal distribution at the lattice temperature is found between 200 and 300K. Below 200K the characteristic temperature exceeds the lattice temperature and the distribution becomes random below about 60 K. This enables the temperature range for which Fermi-Dirac statistics are applicable in QD laser threshold calculations to be identified. (C) 2014 AIP Publishing LLC.