Fabrication of MoS2(1-x)Te2x via Sulfurization using (t-C4H9)2S2 and its Physical Structure Evaluation
Fabrication of MoS2(1-x)Te2x via Sulfurization using (t-C4H9)2S2 and its Physical Structure Evaluation
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DOI：
10.1109/edtm.2019.8731258
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发表时间：
2019-03
期刊：
影响因子：
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通讯作者：
Y. Hibino;S. Ishihara;Y. Oyanagi;K. Yamazaki;Y. Hashimoto;N. Sawamoto;H. Machida;M. Ishikawa;H. Sudoh;H. Wakabayashi;A. Ogura
中科院分区：
文献类型：
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作者：
Y. Hibino;S. Ishihara;Y. Oyanagi;K. Yamazaki;Y. Hashimoto;N. Sawamoto;H. Machida;M. Ishikawa;H. Sudoh;H. Wakabayashi;A. Ogura
近年来，层状材料，特别是过渡金属二硫属化合物（TMD）由于其独特的物理性能和广泛的应用前景而受到人们的广泛关注。在这项研究中，讨论了TMD合金MoS 2（1-x）Te 2 x的制备并评估了其物理结构。结果表明，用共溅射法制备的MoSxTey $（x+y \lt 2.0）$经硫化处理后，可得到MoS 2（1-x）Te 2x。拉曼光谱和X射线光电子能谱结果证实了合金的形成。进一步的X射线衍射研究表明，必须仔细选择制备条件，以防止相分离。该合金的制备有望拓宽TMD在光电子领域的应用。
Recently, layered material, especially transition metal dichalcogenides (TMDs) are attracting growing attention due to its unique physical properties and wide possibility in applications. In this study, the fabrication of a TMD alloy, MoS2(1-x)Te2x is discussed and its physical structure is evaluated. It was shown that MoS2(1-x)Te2x can be fabricated with sulfurization of MoSxTey $( x+y \lt 2.0)$ prepared by co-sputtering. Raman spectroscopy and X-ray photoelectron spectroscopy results confirm the formation of the alloy. Further investigation with X-ray diffraction shows that fabrication condition must be carefully selected in order to prevent phase segregation. Fabrication of the alloy is expected to broaden the application of TMD in optoelectronics field.