Enhancement-mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer
Enhancement-mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer
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使用部分 GaN 盖层优化电场的增强型 AlGaN/GaN HEMT
DOI：
10.1049/mnl.2017.0042
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发表时间：
2017-10-01
影响因子：
1.3
通讯作者：
Yang, Yintang
中科院分区：
文献类型：
--
作者：
Guo, Haijun;Duan, Baoxing;Yang, Yintang
为了优化传统的增强模式AlGaN/GaN高电子迁移率晶体管（HEMT）的表面电场分布，本文首次提出了一种带有p型GaN栅极的新型增强模式AlGaN/GaN HEMT。提出的AlGaN/GaN HEMT使用部分GaN帽层具有优化的表面电场。通过在栅极和漏极之间的区域引入部分GaN帽层，由于极化效应，获得了二维电子气体（2DEG）密度降低。通过改变高密度二deg的浓度分布，施加电场调制效应，引入新的电场峰。漏极侧栅极边缘附近的高电场峰有效减小，电场从栅极向漏极区域的再分布更加均匀。仿真结果表明，与传统的增强模式AlGaN/GaN hemt相比，击穿电压可提高192.2%。
To optimise the surface electric field distribution of conventional enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), a novel enhancement-mode AlGaN/GaN HEMT with a P-type GaN gate is proposed for the first time in this work. The proposed AlGaN/GaN HEMT has an optimised surface electric field using a partial GaN cap layer. Through the introduction of the partial GaN cap layer in the region between the gate and drain electrodes, a two-dimensional electron gas (2DEG) density reduction is obtained due to the polarisation effect. By modifying the concentration distribution of high-density 2DEG, the electric field modulation effect is applied, which introduces a new electric field peak. The high electric field peak near the gate edge of the drain side effectively decreases, and the electric field is more uniformly redistributed from the gate to the drain regions. The simulation results show that the breakdown voltage can be improved by 192.2% compared with that of the conventional enhancement-mode AlGaN/GaN HEMTs.