Synthesis and optical properties of CdS nanowires by a simple chemical deposition
Synthesis and optical properties of CdS nanowires by a simple chemical deposition
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DOI：
10.1007/s10853-009-4162-8
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发表时间：
2010-01
影响因子：
4.5
通讯作者：
Ying Zhao;Xiuchun Yang;Wen-hai Huang;Xiaoyu Zou;Zhengjun Lu
中科院分区：
文献类型：
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作者：
Ying Zhao;Xiuchun Yang;Wen-hai Huang;Xiaoyu Zou;Zhengjun Lu
以高度有序的多孔阳极氧化铝（PAA）膜为模板，采用成对池法制备了CdS纳米线。通过扫描电子显微镜（SEM）、高分辨透射电子显微镜（HRTEM）、能量色散X射线能谱（EDS）和选区电子衍射（SAED）对纳米线的形貌、结构和组成进行了表征。SEM图像表明纳米线阵列高度有序，与PAA的轮廓相吻合。EDS分析，结合HRTEM图像和SEAD图案，证实了CdS的形成。对CdS纳米线的形成、生长机理以及光学性质进行了详细的分析。结果表明，CdS纳米线的形成和生长经历了从初始晶核到纳米颗粒、线形珠链结构到最终纳米线的过程，其形成和生长过程主要是静电吸附和离子扩散的作用。从所合成的CdS纳米线中观察到最大值在430 nm附近的强发射，这归因于被捕获的电子/空穴对的复合。由于量子限制效应，CdS/PAA纳米阵列的紫外-可见吸收边发生了蓝移。该技术可用于制备其他化合物纳米线和新型发光半导体材料。
CdS nanowires were prepared by a paired cell method, using highly ordered porous anodic alumina (PAA) membranes as templates. The morphology, structure, and composition of these nanowires were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive X-ray spectroscopy (EDS), and selected area electron diffraction (SAED) pattern. SEM images indicated that nanowires arrays are highly ordered and coincide with the contours of PAA. The EDS analysis, combined with HRTEM images and SEAD patterns, confirmed the formation of CdS. The formation and growth mechanism of CdS nanowires, as well as the optical properties, were also analyzed in details. The results indicated that the formation and growth of CdS nanowires experience from initial nuclei, nanoparticles, linear pearl-chain structures to final nanowires, attributed to electrostatic adsorption and ions diffusion. A strong emission with a maximum around 430 nm was observed from the synthesized CdS nanowires, which was attributed to the recombination of trapped electron/hole pairs. The absorption edge in UV–Vis spectrum of CdS/PAA nanoarrays showed a blue shift due to the quantum confinement effects. The technique can be used to fabricate other compound nanowires and newly light-emitting semiconductor materials.