The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode-rectifying an oversight in Schottky diode investigation
The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode-rectifying an oversight in Schottky diode investigation
复制标题
具有电阻金属电极的肖特基二极管的电气特性和对氢的响应——纠正肖特基二极管研究中的疏忽
DOI：
10.1088/0022-3727/44/12/125101
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Dawson P
中科院分区：
文献类型：
--
作者：
Dawson P
肖特基势垒结构的电阻金属电极使用4点探针的方法，其中探针连接到金属电极只检查。电阻随温度升高而显著降低的观察结果（在~ 100 K范围内）的二极管电阻-温度（RD-T）特性被认为是由于电荷载流子在低温下被限制到金属电极（高电阻），随着半导体逐渐打开作为并行的载流沟道（低电阻）随着温度的增加而增加，这是由于穿过势垒的电子发射的增加。一个简单的模型构建，准零偏置的电子发射的基础上，产生良好的拟合的实验数据。负微分电阻（NDR）区域的R D-T特性是一个普遍的效果，并证明了在一个广泛的温度范围内的各种肖特基结构生长在Si，GaAs和InP衬底。此外，NDR效应被利用在微型Pd/n-InP器件中，用于检测氮环境气氛中的低水平氢。
Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of∼ 100 K) in the diode resistance–temperature (R D–T) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R D–T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs-and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.