Perfect Separation of Hybrid Orientation Structure of CeO2(100) and (110) Regions Grown on Silicon on Insulator Substrates with Lithographically Formed Trenches
Perfect Separation of Hybrid Orientation Structure of CeO2(100) and (110) Regions Grown on Silicon on Insulator Substrates with Lithographically Formed Trenches
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具有光刻形成沟槽的绝缘体上硅衬底上生长的 CeO2(100) 和 (110) 区域混合取向结构的完美分离
DOI：
10.1149/2.0161612jss
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
T. Inoue and S. Shida
中科院分区：
文献类型：
--
作者：
T. Inoue;S. Shida and N. Sakamoto;T. Inoue and S. Shida
采用电子束诱导取向选择性反应磁控溅射外延技术，研究了Si（100）衬底上CeO2（100）和（110）区的混合取向结构。观察到两个独立的生长区域，CeO2（100）层在生长过程中被电子辐照的区域生长，CeO2（110）层在未被电子束辐照的区域生长。通过X射线衍射测量获得的横向取向映射揭示了这两个取向区域之间的过渡区域的存在。过渡区的宽度被发现与下面的Si衬底电阻率低到大约的电子束直径的大小减少。使用具有光刻形成的沟槽的绝缘体衬底上的硅的HOS生长实验表明，通过优化沟槽的横截面几何形状，特别是使用干法蚀刻，两个区域的完美分离成为可能。
The hybrid orientation structure (HOS) of the CeO 2 (100) and (110) regions on Si (100) substrates is studied using electron beam induced orientation selective epitaxial growth by reactive magnetron sputtering. Two separate areas of growth are seen, with CeO 2 (100) layers found to grow in areas irradiated by electrons during the growth process, and the CeO 2 (110) layers growing in the areas not irradiated by the beam. The lateral orientation mapping obtained by X-ray diffraction measurements reveals the existence of transition regions between these two orientation areas. The width of the transition region is found to decrease with the underlying Si substrate resistivity as low as approximately the size of the electron beam diameter. The HOS growth experiments using silicon on insulator substrates with lithographically formed trenches show that perfect separation of the two areas becomes possible by optimizing the cross-sectional geometry of the trenches, especially using dry etching.