Strain-induced structural changes in thin YBa2Cu3O7−x films on SrTiO3 substrates
Strain-induced structural changes in thin YBa2Cu3O7−x films on SrTiO3 substrates
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SrTiO3 基底上 YBa2Cu3O7−x 薄膜中应变引起的结构变化
DOI：
10.1016/j.tsf.2003.10.037
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发表时间：
2004
期刊：
影响因子：
2.1
通讯作者：
H. Graafsma
中科院分区：
文献类型：
--
作者：
V. Vonk;S. J. V. Reeuwijk;J. Dekkers;S. Harkema;A. Rijnders;H. Graafsma
利用高能同步辐射获得了（001）SrTiO{sub 3}基片上脉冲激光沉积YBa{sub 2}Cu{sub 3}O{sub 7-x}薄膜的倒易空间图。随着薄膜厚度的增加，薄膜呈现出从四方晶系到正交晶系的过渡。临界厚度为11.5 ± 0.6 nm，而四方晶到正交晶转变的临界厚度估计为23 ± 1 nm。此外，它示出，对于邻近基板的误切角高达约1.2度。膜平行于光学表面法线生长，而不是平行于衬底的晶体学c轴生长。使用高能X射线的可行性允许使用复杂的样品室，需要在受控气氛和高温下的薄膜的生长和行为的原位研究。
High-energy synchrotron radiation is used to obtain reciprocal space maps of thin YBa{sub 2}Cu{sub 3}O{sub 7-x} films grown by pulsed laser deposition on (001) SrTiO{sub 3} substrates. The films show a transition from a tetragonal to an orthorhombic structure with increasing film thickness. The critical thickness is found to be 11.5{+-}0.6 nm, whereas the thickness characterizing the tetragonal-to-orthorhombic transition is estimated to be 23{+-}1 nm. Furthermore, it is shown that for miscut angles of the vicinal substrates up to approximately 1.2 deg. , the films grow parallel to the optical surface-normal, rather than to the crystallographic c-axis of the substrates. The feasibility of using high energy X-rays allows for the use of complicated sample chambers, needed for in-situ studies of the growth and behaviour of thin films under controlled atmosphere and at elevated temperatures.