Polishing pad for reducing edge roll-off while maintaining good global flatness of silicon wafer
Polishing pad for reducing edge roll-off while maintaining good global flatness of silicon wafer
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DOI：
10.1016/j.precisioneng.2020.09.010
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发表时间：
2020-11
影响因子：
3.6
通讯作者：
Urara Satake;Senju Matsui;T. Enomoto
中科院分区：
文献类型：
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作者：
Urara Satake;Senju Matsui;T. Enomoto
在硅片双面抛光工艺中，在提高硅片整体平整度的同时，对减少边缘滚动量(ERO)有着强烈的需求。在本研究中，我们阐明了当抛光垫的变形较大时，抛光垫的不均匀磨损对晶片整体平坦度的负面影响可以被抑制。对于ERO，我们发现抛光垫靠近上表面的小变形可以有效地减少ERO的量。此外，我们还发现，硅片下方抛光垫表面到硅片周围抛光垫表面的距离较小，也能有效地减少ERO的量。在此基础上，我们开发了一种三层抛光垫，该抛光垫有望在获得良好的整体平整度的同时减少ERO的量。
In the double-sided polishing process of silicon wafers, there is a strong demand to reduce amount of edge roll-off (ERO) while improving global flatness of a wafer. In the present study, we clarified the negative effects of uneven wear of the polishing pads on the global flatness of a wafer can be suppressed when the deformation of the polishing pads is large. As for the ERO, we found small deformation of the polishing pad near the top surface was effective in reducing the amount of ERO. In addition, we revealed small distance from the surface of the polishing pad at the area under the wafer to that at the area around the wafer was also effective in reducing the amount of ERO. On the basis of the findings, we developed a three-layered polishing pad which was expected to reduce the amount of ERO while achieving the good global flatness.