Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications
Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications
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DOI：
10.1109/led.2017.2757493
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发表时间：
2017-09
影响因子：
4.9
通讯作者：
Jeonghwan Song;J. Woo;Seokjae Lim;Solomon Amsalu Chekol;H. Hwang
中科院分区：
文献类型：
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作者：
Jeonghwan Song;J. Woo;Seokjae Lim;Solomon Amsalu Chekol;H. Hwang
在这封信中，我们展示了一种自限电导桥接随机存取存储器（CBRAM），它消除了一个选择器-一个电阻（1S1R）架构中外部电流遵从性的必要性。标准Ge2Sb2Te5 （GST）被用作CBRAM交换层。此外，还考虑了Te-rich GST。然后比较他们的表现。两种样品均表现出自限导通特性，标准GST和富te GST的导通电流分别为300和$\sim 20~\mu \text{A}$。观察到的自限特性是由GST层中的Te引起的，因为在Te存在的情况下，Cu倾向于形成更稳定的CuTe相，从而限制了Cu丝的生长。此外，为了确认交叉棒阵列应用的可行性，使用我们之前工作中报告的基于Ag/ tio2的阈值选择器器件对1S1R器件进行了评估。因此，我们确认在没有外部电流遵从的1S1R配置中，漏电流减小，电阻分布均匀，保持特性稳定。
In this letter, we demonstrate a self-limited conductive-bridging random access memory (CBRAM) that removes the necessity for external current compliance in a one selector–one resistor (1S1R) architecture. The standard Ge2Sb2Te5 (GST) is used as a CBRAM switching layer. In addition, Te-rich GST is also considered. Their performance is then compared. Both samples exhibit self-limited on-current characteristics, and the on-currents of the standard GST and Te-rich GST are ~300 and $\sim 20~\mu \text{A}$ , respectively. The observed self-limited characteristics are caused by the Te in the GST layer because in the presence of Te, Cu tends to form a more stable CuTe phase that restrict Cu filament growth. Furthermore, to confirm the feasibility of crossbar array applications, the 1S1R device is evaluated using a Ag/TiO2-based threshold selector device reported in our previous work. Hence, we confirm leakage current reduction, a uniform resistance distribution, and stable retention characteristics in the 1S1R configuration with no external current compliance.