Identifying single-electron charging islands in a two-dimensional network of nanocrystalline silicon grains using Coulomb oscillation fingerprints
Identifying single-electron charging islands in a two-dimensional network of nanocrystalline silicon grains using Coulomb oscillation fingerprints
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DOI：
10.1103/physrevb.74.035316
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发表时间：
2006-07
影响因子：
3.7
通讯作者：
M. Khalafalla;H. Mizuta;Z. Durrani
中科院分区：
文献类型：
--
作者：
M. Khalafalla;H. Mizuta;Z. Durrani
We determine, at 4.2 K, the location of dominant single-electron charging islands in a multigrain system formed by a nanocrystalline silicon thin film. The film is 40 nm thick, with 10‐30 nm size silicon grains separated by 1 nm thick grain boundaries. Cross-shaped, single-electron transistors are fabricated in the film, with four current terminals connected to a 100 nm central region containing 10 grains. Four side gates control the device current. We measure single electron oscillations in the current systematically through each of the four terminals, as a function of the gate voltages. Patterns in the Coulomb oscillations are used as “fingerprints” to identify the location of four major charging grains. In addition, electrostatic coupling effects can occur between the grains. Our results may suggest that six major bidirectional current paths form between the different terminals across the device.
