Temperature dependence of the local electronic properties of n-type GaN crystals by micro-Raman spectroscopy and dielectric dispersion at high temperatures
Temperature dependence of the local electronic properties of n-type GaN crystals by micro-Raman spectroscopy and dielectric dispersion at high temperatures
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DOI：
10.35848/1347-4065/abec10
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发表时间：
2021-03
影响因子：
1.5
通讯作者：
M. Kawase;J. Suda
中科院分区：
文献类型：
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作者：
M. Kawase;J. Suda
用微拉曼光谱法测量了n型GaN晶体中纵向光学声子-等离子体耦合模式的拉曼光谱，温度范围为室温~ 200℃。在n型氮化镓的高温下，我们利用可调参数将介电色散方程的虚部拟合到观测到的模式曲线上，通过光谱分析计算了样品的电子密度、电子迁移率和电阻率值。计算得到的电子密度、电子迁移率和电阻率与霍尔效应测量结果基本一致。结果表明：随着温度的升高，n型氮化镓的电子密度值有轻微升高的趋势，而电迁移率则呈下降趋势；
Raman spectra for longitudinal optical phonon-plasmon coupled mode in n-type GaN crystals were measured from room temperature to 200 °C by micro-Raman spectroscopy. We calculated the electron density, electron mobility, and resistivity values of the sample by spectra analysis fitting of the imaginary part of the dielectric dispersion equation to this observed mode profiles using adjustable parameters in n-type GaN at high temperatures. The calculated values of the electron density, electron mobility, and resistivity reproduced those by Hall effect measurement. The results showed that the electron density values in n-type GaN tend to increase slightly with increasing temperature while the electric mobility decreases.