Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy
Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy
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DOI：
10.1063/1.125039
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发表时间：
1999-10-18
影响因子：
4
通讯作者：
Rosenwaks, Y
中科院分区：
文献类型：
--
作者：
Meoded, T;Shikler, R;Rosenwaks, Y
我们报告使用开尔文力显微镜作为测量半导体中的极短少数载流子扩散长度的方法。该方法是基于测量原子力显微镜的尖端和被照射的半导体结的表面之间的表面光电压。光生载流子扩散到结，并改变针尖和样品之间的接触电位差作为从结边缘的距离的函数。然后，通过使用少数载流子连续性方程拟合测量的接触电势差来获得扩散长度L。该方法适用于测量电子扩散长度的GaP外延层。(C)1999年美国物理学会。[S0003-6951（99）03742-0]。
We report on the use of Kelvin force microscopy as a method for measuring very short minority carrier diffusion length in semiconductors. The method is based on measuring the surface photovoltage between the tip of an atomic force microscope and the surface of an illuminated semiconductor junction. The photogenerated carriers diffuse to the junction, and change the contact potential difference between the tip and the sample as a function of the distance from the junction edge. The diffusion length L is then obtained by fitting the measured contact potential difference using the minority carrier continuity equation. The method is applied to measurements of electron diffusion lengths in GaP epilayers. (C) 1999 American Institute of Physics. [S0003-6951(99)03742-0].