Self-sorted, aligned nanotube networks for thin-film transistors
Self-sorted, aligned nanotube networks for thin-film transistors
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DOI：
10.1126/science.1156588
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发表时间：
2008-07-04
期刊：
影响因子：
56.9
通讯作者：
Bao, Zhenan
中科院分区：
文献类型：
--
作者：
LeMieux, Melburne C.;Roberts, Mark;Bao, Zhenan
为了在电子学中找到用途，单壁碳纳米管需要按电子类型有效地分开并排列，以确保最佳和可重复的电子性能。报道了从溶液中沉积的单壁碳纳米管网络场效应晶体管的制备，该晶体管具有可控的拓扑结构和高达90万的通断比。单壁碳纳米管的自旋辅助取向和密度通过不同的表面进行调节，从而有效地改变了与器件通道中的表面功能相互作用的程度。这导致了自分类的单壁碳纳米管网络，其中在器件制造过程中，纳米管手性分离以及密度和取向的同时控制发生在一个步骤中。显微拉曼实验证实了器件的结果是表面化学的函数，表明特定的SWNT电子类型被吸附在改性的介质上。
To find use in electronics, single- walled carbon nanotubes need to be efficiently separated by electronic type and aligned to ensure optimal and reproducible electronic properties. We report the fabrication of single- walled carbon nanotube ( SWNT) network field- effect transistors, deposited from solution, possessing controllable topology and an on/ off ratio as high as 900,000. The spin- assisted alignment and density of the SWNTs are tuned by different surfaces that effectively vary the degree of interaction with surface functionalities in the device channel. This leads to a self- sorted SWNT network in which nanotube chirality separation and simultaneous control of density and alignment occur in one step during device fabrication. Micro- Raman experiments corroborate device results as a function of surface chemistry, indicating enrichment of the specific SWNT electronic type absorbed onto the modified dielectric.