Strain and lattice orientation distribution in SiN/Ge complementary metal-oxide-semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy
Strain and lattice orientation distribution in SiN/Ge complementary metal-oxide-semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy
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DOI：
10.1063/1.4909529
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发表时间：
2015-02-16
影响因子：
4
通讯作者：
Schuelli, T. U.
中科院分区：
文献类型：
--
作者：
Chahine, G. A.;Zoellner, M. H.;Schuelli, T. U.
用高分辨率X射线微区衍射仪研究了CMOS微应变Ge微条的应变和晶格取向的空间分布。最近开发的基于快速扫描X射线衍射显微镜技术的无模型表征工具可以将应变成像到10(-5)(Delta a/a)级别，空间分辨率类似于0.5微米。应变和晶格倾斜是使用应变和取向计算软件包X-SoCS提取的。将所得结果与晶格参数敏感的Mu拉曼光谱和光致发光测量得到的双轴应变分布进行了比较。利用所研究结构的应变松弛动力学有限元模型对实验数据进行了解释。(C)2015 AIP出版有限责任公司。
This paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution x-ray micro-diffraction. The recently developed model-free characterization tool, based on a quick scanning x-ray diffraction microscopy technique can image strain down to levels of 10(-5) (Delta a/a) with a spatial resolution of similar to 0.5 mu m. Strain and lattice tilt are extracted using the strain and orientation calculation software package X-SOCS. The obtained results are compared with the biaxial strain distribution obtained by lattice parameter-sensitive mu-Raman and mu-photoluminescence measurements. The experimental data are interpreted with the help of finite element modeling of the strain relaxation dynamics in the investigated structures. (C) 2015 AIP Publishing LLC.