A drift free nernstian iridium oxide pH sensor
A drift free nernstian iridium oxide pH sensor
复制标题
无漂移能恩斯特氧化铱 pH 传感器
DOI：
10.1109/sensor.1997.635491
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
P. Bergveld
中科院分区：
文献类型：
--
作者：
J. Hendrikse;W. Olthuis;P. Bergveld
提出了一种消除金属氧化物pH传感器漂移问题的新方法。该方法在电极下采用fet结构，该结构使用金属氧化物作为栅极触点。除了增强的漂移特性外，新传感器还具有几乎理想的能量响应。首先给出理论解释，然后通过测量加以证实。
A novel way of eliminating drift problems in metal oxide pH sensors is presented. The method employs a FET-structure under the electrode that uses the metal oxide as a gate contact. In addition to the enhanced drift properties, the new sensor has an almost ideal nernstian response. First a theoretical explanation is given, which is then confirmed by measurements.