Stabilized 14.0%-efficient triple-junction thin-film silicon solar cell
Stabilized 14.0%-efficient triple-junction thin-film silicon solar cell
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DOI：
10.1063/1.4966996
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发表时间：
2016-10
影响因子：
4
通讯作者：
H. Sai;T. Matsui;K. Matsubara
中科院分区：
文献类型：
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作者：
H. Sai;T. Matsui;K. Matsubara
我们报告了使用基板配置制造的高效三结薄膜硅太阳能电池。采用三极等离子体增强化学气相沉积法生长的无掺杂氢化非晶硅（a-Si:H）太阳能电池，其对光浸泡更稳定，被应用于具有蜂窝结构衬底的a-Si:H/μc-Si:H/μc-Si:H三结电池。为了找到短路密度和填充因子的最佳平衡，我们定量研究了电流失配对三结电池的影响。因此，a-Si:H/μc-Si:H/μc-Si:H三结太阳能电池的稳定效率达到14.04%，光致衰减最小为4%，创下了此类太阳能电池的新纪录。
We report on a high-efficiency triple-junction thin-film silicon solar cell fabricated using the substrate configuration. An undoped hydrogenated amorphous silicon (a-Si:H) solar cell grown using triode plasma-enhanced chemical vapor deposition, which is more stable against light soaking, was applied to the a-Si:H/μc-Si:H/μc-Si:H triple-junction cells with honeycomb-textured substrates. To find the best balance in short circuit density and fill factor, we quantitatively investigated the effect of current mismatch on triple-junction cells. Accordingly, a stabilized efficiency of 14.04% was achieved in an a-Si:H/μc-Si:H/μc-Si:H triple-junction solar cell with a minimum light-induced degradation of 4%, setting a new record in this type of solar cells.