Dopant redistribution during oxidation of SiGe
Dopant redistribution during oxidation of SiGe
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SiGe 氧化过程中掺杂剂的重新分布
DOI：
10.1063/1.100882
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发表时间：
1989
影响因子：
4
通讯作者：
B. Meyerson
中科院分区：
文献类型：
--
作者：
F. Legoues;R. Rosenberg;B. Meyerson
这封信比较了纯硅和覆盖极薄一层SiGe合金的硅在氧化过程中硼在硅中的扩散。结果表明，薄层SiGe抑制了硼的氧化增强扩散。提出了一种基于Si间隙抑制的机制。这种现象与之前报道的体积SiGe和SiGe覆盖的Si样品的氧化速度更快有关。
This letter compares diffusion of boron in Si during oxidation both for pure Si and for Si covered with a very thin layer of SiGe alloy. It demonstrates that the thin layer of SiGe suppresses oxidation enhanced diffusion of boron. A mechanism is proposed based on suppression of Si interstitials. This phenomenon is then related to the faster rate of oxidation of bulk SiGe and SiGe‐covered Si samples reported previously.