Tellurium antisites in CdZnTe
Tellurium antisites in CdZnTe
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DOI：
10.1117/12.450755
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发表时间：
2001-10
期刊：
影响因子：
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通讯作者：
M. Chu;S. Terterian;D. Ting;R. James;J. Erickson;H. Yao;T. T. Lam-T.;M. Szawłowski;R. W. Szczebiot-R.-W.
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文献类型：
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作者：
M. Chu;S. Terterian;D. Ting;R. James;J. Erickson;H. Yao;T. T. Lam-T.;M. Szawłowski;R. W. Szczebiot-R.-W.
过量碲熔体中生长的CdTe和Cd0.96Zn0.04Te晶体的n型导电表明，低于导电带0.01 eV能级的供体来源很可能是单电离的碲反位，而不是镉间隙。基于该模型，导带以下0.75 eV的深能级因此是双电离碲反位体。锌含量增加7%以上后，CdZnTe转变为p型。CdZnTe晶体的传导类型随锌含量的变化可以用te -反位的供体和Cd空位的受体之间的补偿来解释。在1- 5 × 1015 cm-3的低掺杂水平下，用铟补偿p型晶体制备出高电阻率的Cd0.9Zn0.1Te晶体。在室温下，高产量的CdZnTe辐射探测器可以分辨Am241源的6个低能峰，性能与目前报道的最好的CdZnTe探测器相当。
The n-type conduction of CdTe and Cd0.96Zn0.04Te crystals grown from melts with excess tellurium indicates that the origin of the donors with an energy level at 0.01 eV below the conduction band are most likely singly ionized tellurium antisites instead of cadmium interstitials. Based on this model, the deep level at 0.75 eV below the conduction band is therefore doubly ionized tellurium antisites. After increasing the zinc content over 7%, CdZnTe turns to p-type. The conduction type variation of CdZnTe crystals as a function of zinc contents is explained by the compensation between the donors of Te-antisites and the acceptors of Cd vacancies. High resitivity Cd0.9Zn0.1Te crystals are produced by compensating the p-type crystals with indium at a low doping level of 1- 5x1015 cm-3. At room temperature, the high yield CdZnTe radiation detectors can resolve the six low energy peaks from the Am241 source, a performance comparable to the best reported CdZnTe detectors.