Study of point defect behaviors in vanadium and its alloys by using HVEM
Study of point defect behaviors in vanadium and its alloys by using HVEM
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HVEM研究钒及其合金的点缺陷行为
DOI：
10.1016/s0022-3115(00)00104-5
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发表时间：
2000
影响因子：
3.1
通讯作者：
H. Matsui
中科院分区：
文献类型：
--
作者：
T. Hayashi;K. Fukumoto;H. Matsui
使用高压电子显微镜检查了钒和 V-xFe (x=0.1, 0.2, 0.3, 3, 5 at.%) 的微观结构演变和点缺陷行为。在辐照过程中，间隙型位错环在所有材料中形成并生长。在 V-xFe 中，测得的饱和环数密度远高于纯钒中的饱和环数密度，表明基体中的铁原子强烈相互作用并捕获自填隙原子（SIAs）。 V-xFe 中形成的环的形状很复杂，即生长到 >100 nm 的环显示出类似堆垛层错的形状。随着铁浓度的增加，这些复杂的形状变得更加重要。这意味着铁原子通过与 SIA 的强相互作用分离成环。根据纯钒和 V-xFe 环数密度的温度依赖性，分别确定了 0.21 eV 和 0.81 eV 的表观迁移能。根据获得的结合能讨论了各种观察到的现象。
Microstructural evolution and point defect behavior in vanadium and V–xFe (x=0.1, 0.2, 0.3, 3, 5 at.%) have been examined by using high voltage electron microscopy. During irradiation, interstitial-type dislocation loops are formed and grow in all materials. In V–xFe, measured saturated loop number density is much higher than that in pure vanadium, indicating iron atoms in the matrix strongly interact and trap self-interstitial atoms (SIAs). The shapes of loops formed in V–xFe are complicated, i.e., loops grown to >100 nm show stacking fault-like shapes. Those complicated shapes become more significant with increasing iron concentration. This means iron atoms segregate to loops through the strong interaction with SIAs. The apparent migration energies of 0.21 eV and 0.81 eV have been determined from the temperature dependence of loop number density for pure vanadium and V–xFe, respectively. Various observed phenomena are discussed in terms of the obtained binding energy.