Imaging the charge transport in arrays of CdSe nanocrystals
Imaging the charge transport in arrays of CdSe nanocrystals
复制标题
DOI：
10.1063/1.1626268
复制
发表时间：
2003-05
影响因子：
4
通讯作者：
M. Drndić;R. Markov;M. Jarosz;M. Bawendi;M. Kastner;N. Marković;M. Tinkham
中科院分区：
文献类型：
--
作者：
M. Drndić;R. Markov;M. Jarosz;M. Bawendi;M. Kastner;N. Marković;M. Tinkham
用电荷成像法测量了室温下电子在CdSe纳米晶薄膜中的扩散系数。这种方法使得研究具有极高电阻或极小扩散系数的薄膜中的电荷输运成为可能。
A method to image charge is used to measure the diffusion coefficient of electrons in films of CdSe nanocrystals at room temperature. This method makes possible the study of charge transport in films exhibiting extremely high resistances or very small diffusion coefficients.