Compositional investigation of potassium doped Cu(In,Ga)Se2 solar cells with efficiencies up to 20.8%
Compositional investigation of potassium doped Cu(In,Ga)Se2 solar cells with efficiencies up to 20.8%
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DOI：
10.1002/pssr.201409040
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发表时间：
2014-03-01
影响因子：
2.8
通讯作者：
Powalla, Michael
中科院分区：
文献类型：
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作者：
Jackson, Philip;Hariskos, Dimitrios;Powalla, Michael
我们报告了薄膜 Cu(In,Ga)Se-2 (CIGS) 太阳能电池的有意钾掺杂、CIGS 吸收剂成分和器件效率之间的相互作用。迄今为止，无法生产出镓/（镓+铟）比例高于35%的高效CIGS太阳能电池。新的掺杂工艺步骤不仅将太阳能电池的转换效率提高至 20.8%，而且还允许 CIGS 吸收剂成分向更高的镓含量转变，同时保持这种高效率水平。我们发现，通常观察到的较高镓含量的开路电压饱和可以通过新的掺杂程序部分克服。这一观察结果使我们得出这样的结论：即使在这种高性能水平上，CIGS 太阳能电池仍然具有超越此处报告的记录值的进一步发展潜力。 （(c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We report on the interaction between intentional potassium doping of thin film Cu(In,Ga)Se-2 (CIGS) solar cells, CIGS absorber composition, and device efficiency. Up to now high efficiency CIGS solar cells could not be produced with a gallium/(gallium + indium) ratio higher than 35%. The new doping process step does not only increase solar cell conversion efficiencies up to 20.8%, but also allows a shift in the CIGS absorber composition towards higher gallium content whilst maintaining this high efficiencies level. We find that the saturation of the open circuit voltages for higher gallium content that is normally observed can partially be overcome by the new doping procedure. This observation leads us to the conclusion that even on this high performance level CIGS solar cells still hold a potential for further development beyond the record values reported here. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)