Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7
Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7
复制标题
DOI：
10.1063/1.2433031
复制
发表时间：
2007-02-05
影响因子：
4
通讯作者：
Robertson, J.
中科院分区：
文献类型：
--
作者：
Liu, D.;Tse, K.;Robertson, J.
The electronic structure of the high dielectric constant oxide La2Hf2O7 and its oxygen vacancies have been calculated. The lowest conduction band is localized on Hf d states and the next is localized on Hf and La d states. The charge density on the O vacancy surrounded by 4 La ions, when in clusters, can become localized on next neighbor Hf ions. It may help create interface dipoles to modify effective work functions. (c) 2007 American Institute of Physics.
