Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds
Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds
复制标题
DOI：
10.1063/1.1613812
复制
发表时间：
2003-09-22
影响因子：
4
通讯作者：
Koshida, N
中科院分区：
文献类型：
--
作者：
Gelloz, B;Sano, H;Koshida, N
纳米晶多孔硅（PS）二极管的电致发光（EL）稳定化是通过用更稳定的硅-碳（Si-C）和硅-氧（Si-O-C）键取代纳米晶硅表面的硅-氢键来实现的，而对电性能没有显著影响。表面改性是通过在约90 degreesC下用有机分子：1-癸烯、十一碳烯酸乙酯或正癸醛对部分和阳极氧化的PS样品进行热处理来进行的。多孔硅器件，其表面已被改性与稳定的共价键显示在EL效率和EL输出强度在直流操作下几个小时没有退化。改善的稳定性可以归因于Si-C和Si-O-C键对与非辐射缺陷的产生相关的电流诱导的表面氧化的高化学抗性。(C)2003年，美国物理学会。
Stabilization of electroluminescence (EL) from nanocrystalline porous silicon (PS) diodes has been achieved by replacing silicon-hydrogen bonds terminating the surface of nanocrystalline silicon with more stable silicon-carbon (Si-C) and silicon-oxygen (Si-O-C) bonds without significant effects on the electrical properties. The surface modification is performed by a thermal treatment of partially and anodically oxidized PS sample at about 90 degreesC with organic molecules: 1-decene, ethyl undecylenate, or n-caprinaldehyde. The porous silicon device whose surface has been modified with stable covalent bonds shows no degradation in the EL efficiency and EL output intensity under dc operation for several hours. The improved stability can be attributed to the high chemical resistance of Si-C and Si-O-C bonds against current-induced surface oxidation associated with the generation of nonradiative defects. (C) 2003 American Institute of Physics.