Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures
Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures
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DOI：
10.1063/1.3544496
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发表时间：
2011-02
影响因子：
3.2
通讯作者：
Y. Shimizu;Yoko Kawamura;M. Uematsu;M. Tomita;T. Kinno;N. Okada;M. Kato;H. Uchida;Mamoru Takahashi;Hiroshi Ito;H. Ishikawa;Y. Ohji;H. Takamizawa;Y. Nagai;K. Itoh
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文献类型：
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作者：
Y. Shimizu;Yoko Kawamura;M. Uematsu;M. Tomita;T. Kinno;N. Okada;M. Kato;H. Uchida;Mamoru Takahashi;Hiroshi Ito;H. Ishikawa;Y. Ohji;H. Takamizawa;Y. Nagai;K. Itoh
我们报告了当前最先进的激光辅助原子探针显微镜分析单晶硅的深度和横向分辨率的直接比较。测量由 5-15 nm 厚的 S28i 和 S30i 富集层组成的同位素异质结构，以重建 S28i 和 S30i 稳定同位素在表面垂直和平行方向上分布的三维图像，分别用于分析深度和横向分辨率。实验获得的横向衰减长度仅比纵向长约两倍，这意味着横向分辨率高于二次离子质谱获得的分辨率。
We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5–15 nm-thick S28i- and S30i-enriched layers were measured to reconstruct three-dimensional images of S28i and S30i stable isotope distributions in the surface perpendicular and parallel directions for the analysis of the depth and lateral resolution, respectively. The decay length experimentally obtained for the lateral direction is only about twice longer than in the direction, meaning that the lateral resolution is higher than obtained by secondary ion mass spectrometry.